US1AHM3(2017) データシートの表示（PDF） - Vishay Semiconductors
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US1AHM3 Datasheet PDF : 5 Pages
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US1A, US1B, US1D, US1G, US1J, US1K, US1M
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2" x 0.2" (5.0 mm x 5.0 mm)
0.2
Copper Pad Areas
0
0
25
50
75
100
125
150
Lead Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1 US1A thru US1G
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
30
TL = 110 °C
25
8.3 ms Single Half Sine-Wave
20
15
10
5
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
TJ = -40 °C
US1J thru US1M
0.01
0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
100
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
TJ = -40 °C US1A thru US1G
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
TJ = 150 °C
TJ = 125 °C
10
1
US1J thru US1M
0.1
TJ = 100 °C
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 - Typical Reverse Leakage Characteristics
Revision: 21-Jul-17
3
Document Number: 88768
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