TIPP110 データシートの表示（PDF） - Power Innovations Ltd
部品番号
コンポーネント説明
一致するリスト
TIPP110 Datasheet PDF : 6 Pages
| |||
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector-base
cut-off current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 10 mA
(see Note 4)
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 8 mA
VCE = 4 V
IE = 4 A
IB = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IB = 0
IC = 0
IC = 1 A
IC = 2 A
IC = 2 A
IC = 2 A
IB = 0
TIPP110
60
TIPP111
80
TIPP112
100
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
500
(see Notes 4 and 5)
(see Notes 4 and 5)
V
2
2
mA
2
1
1
mA
1
2
mA
2.5
V
2.8
V
3.5
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
within 3.2 mm from device body.
PRODUCT INFORMATION
2
Share Link: 