T610H データシートの表示（PDF） - STMicroelectronics
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T610H Datasheet PDF : 9 Pages
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T610H
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 8.5 A, tp = 380 µs
Threshold voltage
Dynamic resistance
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
Tj = 150 °C
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
1. for both polarities of A2 referenced to A1.
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.5
V
0.8
V
62
mΩ
5
µA
2.7
2.2
mA
1.8
Value
1.8
60
Unit
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
P(W)
7
6
5
4
3
2
1
IT(RMS)(A)
0
0
1
2
3
4
5
6
IT(RMS)(A)
7
6
5
4
3
2
1
0
0
25
TC(°C)
50
75
100
125
150
Figure 3.
On-state rms current versus
ambient temperature (free air
convection, full cycle)
IT(RMS)(A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
Ta(°C)
50
75
100
125
150
Figure 4. Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
1.E+00
1.E-01
Zth(j-c)
Zth(j-a)
1.E-02
1.E-03
1.E-03
1.E-02
tp(s)
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Doc ID 15713 Rev 1
3/9
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