SXTA42TA データシートの表示（PDF） - Diodes Incorporated.

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SXTA42TA

300V NPN HIGH VOLTAGE TRANSISTOR IN SOT89

Diodes Incorporated. 

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Symbol

VCBO

VCEO

VEBO

IC

Value

300

300

7

500

SXTA42

Unit

V

V

V

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 5)

Operating and Storage Temperature Range

Symbol

PD

RθJA

TJ,TSTG

Value

1

125

-65 to +150

Unit

W

°C/W

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 6)

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Transfer Static Ratio (Note 6)

Collector-Emitter Saturation Voltage (Note 6)

Base-Emitter Saturation Voltage (Note 6)

Transitional Frequency

Output Capacitance

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

Cobo

Min

Typ

Max

Unit

Test Condition

300

—

—

V

IC = 100µA

300

—

—

V

IC = 1mA

7

—

—

V

IE = 100µA

—

—

0.1

µA

VCB = 200V

—

—

0.1

µA

VEB = 6V

25

—

—

40

—

—

40

—

—

—

IC = 1mA, VCE = 10V

—

IC = 10mA, VCE = 10V

—

IC = 30mA, VCE = 10V

—

—

0.5

V

IC = 20mA, IB = 2mA

—

—

0.9

V

IC = 20mA, IB = 2mA

50

—

—

MHz

IC = 10mA, VCE = 20V

f = 20MHz

—

—

6

pF

VCB = 20V, f = 1MHz

Note:

5. For the device mounted on 15mm x 15mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

SXTA42

Document number: DS33197 Rev. 5 - 2

2 of 5

www.diodes.com

June 2019

© Diodes Incorporated

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