ST1S12XX(2008) データシートの表示（PDF） - STMicroelectronics
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ST1S12XX
(Rev.:2008)
(Rev.:2008)
STMicroelectronics
ST1S12XX Datasheet PDF : 20 Pages
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Electrical characteristics
4
Electrical characteristics
ST1S12xx
Table 6.
Symbol
Electrical characteristics for ST1S12G
VIN =VEN = 3.6 V, CIN = 4.7 µF, CO =10 µF, L = 2.2 µH, TJ = -40 to 125 °C (unless otherwise
specified. Typical values are referred to 25 °C)
Parameter
Test conditions
Min. Typ. Max. Unit
FB Feedback voltage
IFB
VFB pin bias current
VIN Minimum input voltage
IQ
Quiescent current
IO
Output current
VEN Enable threshold
TJ =-40 to 125°C
IO= 10mA to 0.7A
VIN =VEN, VFB=0.65V
VEN = 0, T = -40°C to 85°C
VIN = 2.5 to 5.5V Note 1
Device ON, VIN = 2.5 to 5.5V
Device OFF
IEN Enable pin current
%VO/ΔVIN Reference line regulation
%VO/ΔIO Reference load regulation
PWMfS PWM switching frequency
DMAX Maximum duty cycle
RDSON-N NMOS switch on resistance
RDSON-P PMOS switch on resistance
ISWL Switching current limitation
ν
Efficiency Note 1
TSHDN
THYS
Thermal shutdown
Thermal shutdown hysteresis
%VO/ΔIO Load transient response
%VO/ΔIO
Short circuit removal
response
VIN = 2.5V to 5.5V Note 1
IO = 10mA to 700mA Note 1
ISW = 100 mA
ISW = 100 mA
Note 1
IO = 10mA to 100mA, VO = 1.8V
IO = 100mA to 0.7A, VO = 1.8V
IO = 100mA to 700mA, TA = 25°C
tR = tF ≥ 200ns, CO=22µF Note 1
IO = 10mA to IO=short, TA = 25°C
Note 1
582
-50
2.5
0.7
1.5
1.16
130
-5
-10
600 618
V
50
nA
V
500 600
µA
1
µA
A
V
0.5
1
µA
0.05 0.1 %VO/ΔVIN
0.0025 0.005 %VO/mA
1.7 2.08 MHz
100
%
0.25 0.4
Ω
0.25 0.45
Ω
1.6
A
80
%
90
150
°C
15
°C
+5
%VO
+10 %VO
Note: 1 Guaranteed by design, but not tested in production.
6/20
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