RMB2S データシートの表示（PDF） - Vishay Semiconductors
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RMB2S Datasheet PDF : 5 Pages
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www.vishay.com
RMB2S, RMB4S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
RMB2S
RMB4S
Maximum instantaneous forward
voltage per diode
IF = 0.4 A
VF
1.25
Maximum DC reverse current at rated DC blocking TA = 25 °C
voltage per diode
TA = 125 °C
IR
5.0
100
Maximum reverse recovery time per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
150
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
13
UNIT
V
μA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RMB2S
RMB4S
UNIT
Typical thermal resistance (1)
RJA (1)
RJA (2)
RJL (1)
85
70
°C/W
20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
RMB4S-E3/45
0.22
45
RMB4S-E3/80
0.22
80
BASE QUANTITY
100
3000
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
0.8
0.7
Aluminum Substrate
0.6
0.5
0.4
Glass Epoxy PCB
0.3
0.2
0.1 Resistive or Inductive Load
0
0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
35
30
TA = 40 °C
Single Half Sine-Wave
25
20
15 f = 50 Hz
f = 60 Hz
10
5
1.0 Cycle
0
1
10
100
Number of Cycles
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 19-Aug-13
2
Document Number: 88705
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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