PHM21NQ15T データシートの表示（PDF） - Philips Electronics

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PHM21NQ15T

TrenchMOS™ standard level FET

Philips Electronics 

Philips Semiconductors

PHM21NQ15T

TrenchMOS™ standard level FET

5. Characteristics

Table 4: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 250 µA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 150 °C

Tj = −55 °C

VDS = 120 V; VGS = 0 V

Tj = 25 °C

Tj = 150 °C

VGS = ±20 V; VDS = 0 V

VGS = 10 V; ID = 15 A; Figure 7 and 8

Tj = 25 °C

Tj = 150 °C

VGS = 5 V; ID = 3 A; Figure 7 and 8

150 -

-

V

134 -

-

V

23

1.2 -

-

-

4V

-

V

4.4 V

-

-

1 µA

-

-

100 µA

-

10 100 nA

-

40 55 mΩ

-

92 127 mΩ

-

42 -

mΩ

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

rise time

td(off)

turn-off delay time

tf

fall time

Source-drain diode

ID = 20 A; VDD = 75 V; VGS = 10 V; Figure 13

-

36.2 -

nC

-

8-

nC

-

11.6 -

nC

VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11

-

2080 -

pF

-

285 -

pF

-

90 -

pF

VDD = 75 V; RL = 75 Ω; VGS = 10 V; RG = 5.6 Ω -

16 -

ns

-

12 -

ns

-

50 -

ns

-

38 -

ns

VSD

source-drain (diode forward) voltage IS = 10 A; VGS = 0 V; Figure 12

trr

reverse recovery time

IS = 10 A; dIS/dt = −100 A/µs; VGS = 0 V

Qr

recovered charge

-

0.83 1.2 V

-

150 -

ns

-

215 -

nC

9397 750 10882

Preliminary data

Rev. 01 — 30 January 2003

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

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