MPSH10 データシートの表示（PDF） - Central Semiconductor

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MPSH10

SILICON NPN RF TRANSISTORS

Central Semiconductor 

MPSH10

MPSH11

SILICON

NPN RF TRANSISTORS

TO-92 CASE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MPSH10 and

MPSH11 are silicon NPN RF transistors manufactured

by the epitaxial planar process and designed for low

noise UHF/VHF amplifier and high output oscillator

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

PD

TJ, Tstg

ΘJA

30

25

3.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=25V

IEBO

VEB=2.0V

BVCBO

IC=100μA

30

BVCEO

IC=1.0mA

25

BVEBO

IE=10μA

3.0

VCE(SAT) IC=4.0mA, IB=0.4mA

VBE(ON)

VCE=10V, IB=4.0mA

hFE

VCE=10V, IC=4.0mA

60

fT

VCE=10V, IC=4.0mA, f=100MHz

650

Ccb

VCB=10V, IE=0, f=1.0MHz

Crb

VCB=10V, IE=0, f=1.0MHz (MPSH10)

0.35

Crb

VCB=10V, IE=0, f=1.0MHz (MPSH11)

0.60

rb’Cc

VCB=10V, IC=4.0mA, f=31.8MHz

MAX

100

100

0.50

0.95

0.70

0.65

0.90

9.0

UNITS

V

V

V

mW

°C

°C/W

UNITS

nA

nA

V

V

V

V

V

MHz

pF

pF

pF

ps

R0 (22-May 2013)

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