MMST5401 データシートの表示（PDF） - Rectron Semiconductor
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MMST5401 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS (2)
Collector-Emitter Breakdown Voltage (IC= -1.0mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -100µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -10µAdc, IC= 0)
Collector Cutoff Current (VCB= -120Vdc, IE= 0)
Emitter Cutoff Current (VEB= -3.0Vdc, IC= 0)
ON CHARACTERISTICS (2)
DC Current Gain (IC= -1mAdc, VCE= -5Vdc)
(IC= -10mAdc, VCE= -5Vdc)
(IC= -50mAdc, VCE= -5Vdc)
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1mAdc)
(IC= -50mAdc, IB= -5mAdc)
Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1mAdc)
(IC= -50mAdc, IB= -5mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -10Vdc, f= 100MHz)
Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)
Small-Signal Current Gain (IC= -1.0mAdc, VCE= -10Vdc, f= 1.0kHz)
Noise figure (IC= -0.2mAdc, VCE= -5Vdc, f= 1.0kHz,Rg=10Ω)
NOTES : 2. Pulse Test: Pulse Width-<300µs,Duty Cycle-<2.0%
Symbol
Min
V(BR)CEO
-150
V(BR)CBO
-160
V(BR)EBO
-5
ICBO
-
IEBO
-
50
hFE
60
50
-
VCE(sat)
-
-
VBE(sat)
-
fT
100
Cob
-
hfe
40
NF
-
Max
-
-
-
-50
-50
-
240
-
-0.2
-0.5
-1
-1
300
6
200
8
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
-
Vdc
Vdc
MHz
pF
-
dB
RECTRON
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