MMDF2P01HD データシートの表示（PDF） - Motorola => Freescale

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MMDF2P01HD

TMOS P-Channel Field Effect Transistors

Motorola => Freescale 

MMDF2P01HD

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

12

—

Zero Gate Voltage Drain Current

(VDS = 12 Vdc, VGS = 0 Vdc)

(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

0.7

—

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 2.0 Adc)

(VGS = 2.7 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

Forward Transconductance (VDS = 2.5 Vdc, ID = 1.0 Adc)

gFS

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS(3)

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 6.0 Vdc, ID = 2.0 Adc,

VGS = 2.7 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDS = 6.0 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

QT

—

(VDS = 10 Vdc, ID = 2.0 Adc,

VGS = 4.5 Vdc)

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

Reverse Recovery Time

trr

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

Typ

Max

Unit

Vdc

—

—

17

—

mV/°C

µAdc

—

1.0

—

10

—

100

nAdc

Vdc

1.0

1.1

3.0

—

mV/°C

Ohm

0.16

0.180

0.2

0.220

4.75

—

mhos

530

740

pF

410

570

177

250

21

45

ns

156

315

38

75

68

135

16

35

44

90

68

135

54

110

9.3

13

nC

0.8

—

4.0

—

3.0

—

Vdc

1.69

2.0

1.2

—

48

—

ns

23

—

25

—

0.05

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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