MMBT5087LT1G(2009) データシートの表示（PDF） - ON Semiconductor
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MMBT5087LT1G Datasheet PDF : 7 Pages
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MMBT5087LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
Collector Cutoff Current
(VCB = −10 Vdc, IE = 0)
(VCB = −35 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mAdc, VCE = −5.0 Vdc)
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −500 mAdc, VCE = −5.0 Vdc, f = 20 MHz)
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = −20 mAdc, VCE = −5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz)
Symbol
Min
Max
Unit
V(BR)CEO
−50
−
Vdc
V(BR)CBO
−50
−
Vdc
ICBO
nAdc
−
−10
−
−50
hFE
−
250
800
250
−
250
−
VCE(sat)
−
−0.3
Vdc
VBE(sat)
−
0.85
Vdc
fT
Cobo
hfe
NF
40
−
MHz
−
4.0
pF
250
900
−
dB
−
2.0
−
2.0
10
7.0
5.0
3.0
2.0 1.0 mA
1.0
10 20
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
IC = 10 mA
30 mA
100 mA
300 mA
BANDWIDTH = 1.0 Hz
RS ≈ 0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10 20
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS ≈ ∞
300 mA
100 mA
30 mA
10 mA
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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