MKP3V120 データシートの表示（PDF） - ON Semiconductor

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MKP3V120

Sidac High Voltage

ON Semiconductor 

MKP3V120, MKP3V240

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Repetitive Peak Off−State Current

(50 to 60 Hz Sine Wave)

VDRM = 90 V

VDRM = 180 V

ON CHARACTERISTICS

MKP3V120

MKP3V240

IDRM

−

−

10

mA

Breakover Voltage, IBO = 200 mA

VBO

MKP3V120

MKP3V240

V

110

−

130

220

−

250

Breakover Current

Peak On−State Voltage

(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)

Dynamic Holding Current

(Sine Wave, 60 Hz, RL = 100 W)

Switching Resistance

(Sine Wave, 50 to 60 Hz)

IBO

−

−

200

mA

VTM

−

1.1

1.5

V

IH

−

−

100

mA

RS

0.1

−

−

kW

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of On−State Current,

Critical Damped Waveform Circuit

(IPK = 130 W, Pulse Width = 10 msec)

di/dt

−

120

−

A/ms

Voltage Current Characteristic of SIDAC

(Bidirectional Device)

+ Current

Symbol

IDRM

VDRM

VBO

IBO

IH

VTM

ITM

Parameter

Off State Leakage Current

Off State Repetitive Blocking Voltage

Breakover Voltage

Breakover Current

Holding Current

On State Voltage

Peak on State Current

ITM

IH

VTM

Slope = RS

IS

IDRM VS

I(BO)

+ Voltage

VDRM

V(BO)

RS

+

(V(BO) – VS)

(IS – I(BO))

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