MGSF1P02LT1 データシートの表示（PDF） - ON Semiconductor
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MGSF1P02LT1 Datasheet PDF : 8 Pages
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MGSF1P02LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.55
0.5 VGS = 4.5 V
150°C
0.45
25°C
0.4
-55°C
0.35
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
0.4
0.38
0.36
0.34 VGS = 10 V
0.32
150°C
0.3
0.28
25°C
0.26
0.24
-55°C
0.22
0.2
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
1.25
1.2
VGS = 10 V
ID = 1.5 A
1.15
1.1
1.05
VGS = 4.5 V
ID = .75 A
1
0.95
0.9
0.85
0.8
-ā55
-5
45
95
145
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with Temperature
10
VDS = 16 V
TJ = 25°C
8
6
4
ID = 1.5 A
2
0
0
1000 2000 3000 4000 5000 6000
QT, TOTAL GATE CHARGE (pC)
Figure 6. Gate Charge
1
1000
0.1
TJ = 150°C
25°C
-55°C
100
0.01
0.001
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
Coss
Crss
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 8. Capacitance
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