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MC10E104FNG データシートの表示(PDF) - ON Semiconductor

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MC10E104FNG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC10E104FNG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
MC10E104, MC100E104
Table 6. 100E SERIES PECL DC CHARACTERISTICS VCCx = 5.0 V; VEE = 0.0 V (Note 5)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 6)
VOL
Output LOW Voltage (Note 6)
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IIH
Input HIGH Current
IIL
Input LOW Current
38
46
38
46
44
53 mA
3975 4050 4120 3975 4050 4120 3975 4050 4120 mV
3190 3295 3380 3190 3255 3380 3190 3260 3380 mV
3835 3975 4120 3835 3975 4120 3835 3975 4120 mV
3190 3355 3525 3190 3525 3355 3190 3355 3525 mV
200
200
200 mA
0.5 0.3
0.5 0.25
0.5 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
6. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 7. 100E SERIES NECL DC CHARACTERISTICS VCCx = 0 V; VEE = −5.0 V (Note 7)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 8)
VOL
Output LOW Voltage (Note 8)
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IIH
Input HIGH Current
IIL
Input LOW Current
38
46
38
46
44
53 mA
−1025 −950 −880 −1025 −950 −880 −1025 −950 −880 mV
−1810 −1705 −1620 −1810 −1745 −1620 −1810 −1740 −1620 mV
−1165 −1025 −880 −1165 −1025 −880 −1165 −1025 −880 mV
−1810 −1645 −1475 −1810 −1645 −1475 −1810 −1645 −1475 mV
200
200
200 mA
0.5 0.3
0.5 0.25
0.5 0.2
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
7. Input and output parameters vary 1:1 with VCC. VEE can vary −0.46 V / +0.8 V.
8. Outputs are terminated through a 50 W resistor to VCC − 2.0 V.
Table 8. AC CHARACTERISTICS VCCx= 5.0 V; VEE = 0.0 V or VCCx = 0.0 V; VEE = −5.0 V (Note 9)
−40°C
25°C
Symbol
fMAX
tPLH
tPHL
Characteristic
Maximum Toggle Frequency
Propagation Delay to Output
Min Typ Max Min Typ Max Min
700
700
D to Q 225
D to F 500
385 600 225
725 1000 500
385 600 225
725 1000 500
tSKEW Within-Device Skew (Note 10)
D to Q
75
75
tJITTER
tr
tf
Random Clock Jitter (RMS)
Rise/Fall Time
(20 - 80%)
<1
<1
Q 100 425 700 100 425 700 100
F 300 475 700 300 475 700 300
85°C
Typ
700
385
725
75
<1
425
475
Max
600
1000
Unit
MHz
ps
ps
ps
ps
700
700
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
9. 10 Series: VEE can vary −0.46 V / +0.06 V.
100 Series: VEE can vary −0.46 V / +0.8 V.
10. Within-device skew is defined as identical transitions on similar paths through a device.
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