M6MGT166S2BWG データシートの表示（PDF） - MITSUBISHI ELECTRIC

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M6MGT166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY

MITSUBISHI ELECTRIC  

1. Flash Memory

MITSUBISHI LSIs

M6MGB/T166S2BWG

16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (131,072-WORD BY 16-BIT) CMOS SRAM

Stacked-CSP (Chip Scale Package)

DESCRIPTION

The Flash Memory of M6MGB/T166S2BWG is 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating

BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank

while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and

personal computing, and communication products. The Flash Memory of M6MGB/T166S2BWG is fabricated by CMOS technology for the

peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells.

FEATURES

Organization

.................................1048,576 word x 16bit

Supply voltage ............................................................. VCC = 2.7~3.6V

Access time

.............................. 90ns (Max.)

Power Dissipation

Read

................................. 54 mW (Max. at 5MHz)

(After Automatic Power Down) .......... 0.33mW (typ.)

Program/Erase

Standby

..................................................................102.633mmWW

(Max.)

(typ.)

Deep power down mode ....................... 0.33mW (typ.)

Auto program for Bank(I)

Program Time .................................4ms (typ.)

Program Unit

(Byte Program)

.........................1word

(Page Program) .........................128word

Auto program for Bank(II)

Program Time .................................4ms (typ.)

Program Unit ................................. 128word

Auto Erase

Erase time

................................. 40 ms (typ.)

Erase Unit

Bank(I)

Bank(II)

PBMaoaroiantmBBellotoeccrkkBl.o...c...k..................................................311266KKKwwwooorrrddd

x

x

x

1

7

28

.........................................

Program/Erase cycles

100Kcycles

Boot Block

M6MGB166S2BWG ........................ Bottom Boot

M6MGT166S2BWG ........................ Top Boot

Other Functions

Soft Ware Command Control

Selective Block Lock

Erase Suspend/Resume

Program Suspend/Resume

Status Register Read

Alternating Back Ground Program/Erase Operation

Between Bank(I) and Bank(II)

Auto Power Down Mode

3

Nov 1999 , Rev.2.3

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