LS4148-GS08 データシートの表示（PDF） - Vishay Semiconductors
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LS4148-GS08 Datasheet PDF : 4 Pages
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LS4148, LS4448
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
IF = 5 mA
IF = 50 mA
IF = 100 mA
VR = 20 V
VR = 20 V, Tj = 150 °C
VR = 75 V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
VR = 0, f = 1 MHz, VHF = 50 mV
IF = IR = 10 mA, iR = 1 mA
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
LS4448
LS4148
LS4448
VF
VF
VF
IR
IR
IR
V(BR)
CD
trr
trr
0.620
100
TYP.
0.860
0.930
MAX.
0.720
1
1
25
50
5
4
8
4
UNIT
V
V
V
nA
μA
μA
V
pF
ns
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
LS4148
10
1
Scattering Limit
1000
Tj = 25 °C
100
Scattering Limit
10
0.1
0
16640
Tj = 25 °C
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
1
1
94 9098
10
100
VR- Reverse Voltage (V)
Fig. 3 - Reverse Current vs. Reverse Voltage
1000
100
LS4448
10
Scattering Limit
1
0.1
0
16642
Tj = 25 °C
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
3.0
2.5
f = 1 MHz
Tj = 25 °C
2.0
1.5
1.0
0.5
0
0.1
94 9099
1
10
100
V - Reverse Voltage (V)
R
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 2.0, 14-Jul-17
2
Document Number: 85561
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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