Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-236AB
13mA
* ID (continuous) is limited by max rated Tf.
30mA
Power Dissipation
@TA = 25°C
0.36W
θjc
°C/W
200
θja
°C/W
350
IDR
13mA
LND250
IDRM*
30mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSX Drain-to-Source Breakdown Voltage
500
VGS(OFF) Gate-to-Source OFF Voltage
-1.0
∆VGS(OFF) Change in VGS(OFF) with Temperature
IGSS
Gate Body Leakage Current
ID(OFF) Drain-to-Source Leakage Current
V
-3.0
V
5.0 mV/°C
100
nA
100
nA
100
µA
IDSS
Saturated Drain-to-Source Current
1.0
3.0
RDS(ON) Static Drain-to-Source ON-State Resistance
850 1K
∆RDS(ON) Change in RDS(ON) with Temperature
1.2
GFS
Forward Transconductance
1.0
2.0
CISS
Input Capacitance
7.5
10
COSS
Output Capacitance
2.0
3.5
CRSS
Reverse Transfer Capacitance
0.5
1.0
td(ON)
Turn-ON Delay Time
0.09
tr
Rise Time
0.45
td(OFF) Turn-OFF Delay Time
0.1
tf
Fall Time
1.3
VSD
Diode Forward Voltage Drop
0.9
trr
Reverse Recovery Time
200
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Ω
%/°C
m
pF
µs
V
ns
Conditions
VGS = -10V, ID = 1.0mA
VDS = 25V, ID = 100nA
VDS = 25V, ID = 100nA
VGS = ±20V, VDS = 0V
VGS = -10V, VDS = 450V
VGS = -10V, VDS = 0.8V max rating
TA =125°C
VGS = 0V, VDS = 25V
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 0.5mA
VGS = 0V, ID = 1.0mA
VGS = -10V, VDS = 25V
f = 1MHz
VDD = 25V, ID = 1.0mA,
RGEN = 25Ω
VGS = -10V, ISD = 1.0mA
VGS = -10V, ISD = 1.0mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
2
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com