KSA708 データシートの表示（PDF） - Weitron Technology

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KSA708

PNP Plastic-Encapsulate Transistor

Weitron Technology 

WEITRON

PNP Plastic-Encapsulate Transistor

P b Lead(Pb)-Free

FEATURES :

• Low Saturation Medium Current Application

KSA708

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Parameter

Symbol

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current -Continuous

IC

Collector Power Dissipation

PC

Thermal Resistance From Junction To Ambient

RθJA

Junction Temperature

TJ

Storage Temperature

Tstg

Value

-80

-60

-8

-0.7

0.8

156

150

-55 to +150

Units

V

V

V

A

W

°C/W

°C

°C

ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)

Parameter

Symbol Test conditions MIN

Collector-base breakdown voltage

V(BR)CBO IC= -0.1mA, IE =0

-80

Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0

-60

Emitter-base breakdown voltage

V(BR)EBO IE= -0.1mA, IC=0

-8

Collector cut-off current

ICBO VCB= -60V, I E=0

Emitter cut-off current

IEBO VEB= -5V, IC=0

DC current gain

Collector-emitter saturation voltage

hFE VCE= -2V, I C= -50mA 40

VCE(sat) IC=-0.5A,I B = -50mA

Base-emitter saturation voltage

VBE(sat) IC=-0.5A, IB=-50mA

Transition Frequency

fT

VCE=-10V,IC=-50mA

Collector output capacitance

Cob

VCB=-10V, I E =0,

f=1MHz

TYP

50

13

MAX

-0.1

-0.1

240

-0.7

-1.1

Units

V

V

V

µA

µA

V

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

R

40-80

O

70-140

Y

120-240

WEITRON

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hpp://www.weitron.com.tw

23-Feb-2011

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