IRGIB7B60KD データシートの表示（PDF） - International Rectifier

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IRGIB7B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRGIB7B60KD

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.01

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3

R4R4

τCτ

Ri (°C/W)

0.367

0.425

τi (sec)

0.000164

0.000652

τ3 τ3

τ4 τ4

1.070

0.081521

1.928

2.124500

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

t1 , Rectangular Pulse Duration (sec)

1E+0

1E+1

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

0.01

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

0.001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

R3R3 Ri (°C/W)

τCτ 2.530

τ3 τ3

1.354

2.114

τi (sec)

0.001

0.068689

2.758

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1

10

100

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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