IRG4BC40SPBF データシートの表示（PDF） - International Rectifier
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IRG4BC40SPBF Datasheet PDF : 8 Pages
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IRG4BC40SPbF
4000
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
Cres = C gc
Coes = C ce + C gc
3000
Cies
2000
Coes
1000
Cres
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCE = 400V
IC = 31A
16
12
8
4
0
A
0
20
40
60
80
100
120
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
7.8
VCC = 480V
VGE = 15V
TJ = 25°C
7.7 I C = 31A
7.6
7.5
7.4
7.3
0
A
10
20
30
40
50
60
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100
RG = 10Ω
VGE = 15V
VCC = 480V
10
I C = 62A
IC = 31A
IC = 16A
1
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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