IR20153S データシートの表示（PDF） - International Rectifier

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IR20153S

HIGH SIDE DRIVER WITH RECHARGE

International Rectifier 

Preliminary Data Sheet PD60214 Rev B

IR20153S & (PbF)

HIGH SIDE DRIVER WITH RECHARGE

Features

Product Summary

• Floating channel designed for bootstrap operation

Fully operational up to 150V

VOFFSET

150V max.

Tolerant to negative transient voltage, dV/dt immune

• Gate drive supply range from 5V to 20V

• Undervoltage lockout

• Internal recharge FET for bootstrap refresh

• Internal deadtime of 11µs and 0.8µs

• CMOS Schmitt-triggered input logic

• Output out of phase with input

• Reset input

• Split pull-up and pull-down gate drive pins

• Also available LEAD-FREE (PbF)

IO+/-

VOUT

ton/off

400mA @ VBS=7V,

1.5A @ VBS=16V

5-20V

1.0 and 0.3 µs

Description

Package

The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC

and latch immune CMOS technologies enable ruggedized monolithic construction. The

logic input is compatible with standard CMOS output down to 3.3V. The output driver

features a high pulse current buffer stage designed for minimum cross-conduction. The

floating channel can be used to drive an N-channel power MOSFET in the high or low

side configuration which operates up to 150 volts.

8-Lead SOIC

Typical Connection

up to 150V

VCC

IN

RESET

(Refer to Lead Assignments

for correct configuration).

This/These diagram(s) show

electrical connections only.

Please refer to our Applica-

tion Notes and DesignTips

for proper circuit board lay-

out.

www.irf.com

VCC

IN

GND

RESET

VB

HOH

HOL

VS

Load

1

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