IPS512G データシートの表示（PDF） - International Rectifier

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IPS512G

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

International Rectifier 

IPS511G/IPS512G

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).

Symbol Parameter

Min.

Vout

Voffset

Vin

Iin, max

Maximum output voltage

Vcc-50

Maximum logic ground to load ground offset Vcc-50

Maximum Input voltage

-0.3

Maximum IN current

-5

Vdg

Maximum diagnostic output voltage

-0.3

Idg, max Maximum diagnostic output current

-1

Isd cont. Diode max. continuous current (1)

(IPS511G) —

(per leg/both legs ON - IPS512G) —

Isd pulsed Diode max. pulsed current (1)

—

ESD1 Electrostatic discharge voltage (Human Body) —

ESD2 Electrostatic discharge voltage (Machine Model) —

Pd

Maximum power dissipation

(rth=125oC/W) IPS511G

—

(rth=85oC/W, both legs on) IPS512G

—

Tj max. Max. storage & operating junction temp.

-40

Vvv max Maximum Vcc voltage

—

Max.

Vcc+0.3

Vcc+0.3

5.5

10

5.5

10

1.4

0.8

10

4000

500

1

1.5

+150

50

Units

V

mA

V

mA

A

V

W

oC

V

Test Conditions

C=100pF, R=1500Ω,

C=200pF, R=0Ω, L=10µH

Thermal Characteristics

Symbol Parameter

Rth1

Rth2

Thermal resistance with standard footprint

Thermal resistance with 1" square footprint

Rth1

Thermal resistance with standard footprint

(2 mos on)

(2 mosfets on)

Rth2 (1) Thermal resistance with standard footprint

(1 mos on)

(1 mosfet on)

Rth2

Thermal resistance with 1" square footprint

(2 mos on)

(2 mosfets on)

Min.

—

—

Typ. Max. Units Test Conditions



a

&

a

8 Lead SOIC

—

85

— oC/W

16 Lead SOIC

—

100

—

—

#

—

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

2

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