75639P データシートの表示（PDF） - Intersil

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75639P

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

Intersil 

HUF75639G3, HUF75639P3, HUF75639S3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Drain Current

100

V

100

V

±20

V

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

56

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200

1.35

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

oC

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ON STATE SPECIFICATIONS

BVDSS

IDSS

IGSS

ID = 250µA, VGS = 0V (Figure 11)

VDS = 95V, VGS = 0V

VDS = 90V, VGS = 0V, TC = 150oC

VGS = ±20V

Gate to Source Threshold Voltage

Drain to Source On Resistance

THERMAL SPECIFICATIONS

VGS(TH)

rDS(ON)

VGS = VDS, ID = 250µA (Figure 10)

ID = 56A, VGS = 10V (Figure 9)

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

RθJA

(Figure 3)

TO-247

TO-220, TO-263

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

tf

Turn-Off Time

tOFF

GATE CHARGE SPECIFICATIONS

VDD = 50V, ID ≅ 56A,

RL = 0.89Ω, VGS = 10V,

RGS = 5.1Ω

Total Gate Charge

Gate Charge at 10V

Threshold Gate Charge

Gate to Source Gate Charge

Reverse Transfer Capacitance

Qg(TOT)

Qg(10)

Qg(TH)

Qgs

Qgd

VGS = 0V to 20V

VGS = 0V to 10V

VGS = 0V to 2V

VDD = 50V,

ID ≅ 56A,

RL = 0.89Ω

Ig(REF) = 1.0mA

(Figure 13)

MIN TYP MAX UNITS

100

-

-

V

-

-

1

µA

-

-

250

µA

-

-

±100

nA

2

-

4

V

-

0.021 0.025

Ω

-

-

0.74 oC/W

-

-

30

oC/W

-

-

62

oC/W

-

-

110

ns

-

15

-

ns

-

60

-

ns

-

20

-

ns

-

25

-

ns

-

-

70

ns

-

110

130

nC

-

57

75

nC

-

3.7

4.5

nC

-

9.8

-

nC

-

24

-

nC

2

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