C5460 データシートの表示（PDF） - Hamamatsu Photonics
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C5460 Datasheet PDF : 4 Pages
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APD module C5460 series
s General ratings
Parameter
Power supply
Current dissipation
Board dimensions
Weight
Symbol
Vs
-
-
-
Condition
+12 V
-12 V
+12 V
-12 V
C5460
Min. Typ. Max.
C5460-01
Min. Typ. Max.
Unit
+11.4 +12 +12.6 +11.4 +12 +12.6
V
-11.4 -12 -12.6 -11.4 -12 -12.6
V
-
+30 +45
-
+35 +45
mA
-
-11
-16
-
-11
-16
mA
80 × 50 × 23
80 × 50 × 23
mm
52
52
g
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Positive supply voltage
Vp
+16
V
Negative supply voltage
Vn
-16
V
Operating temperature
Topr
0 to +60
°C
Storage temperature
Tstg
-30 to +70
°C
s Specification (Typ. Ta=25 °C, Vcc=±12 V, unless otherwise noted)
Photoelectric section (Si APD)
Parameter
Symbol
Condition
C5460
C5460-01
Unit
Active area
A
φ1.5
φ3.0
mm
Spectral response range
λ
400 to 1000
nm
Peak sensitivity wavelength λp
800
nm
Photo sensitivity
S
λ=800 nm,
Gain=1
0.5
A/W
Temperature stability
of gain *
-
25 ± 10 °C,
Gain=30
±2.5 Typ., ±5 Max.
%
High-speed amplifier section (C5460)
Parameter
Symbol
Condition
Cut-off frequency
fc
High band, -3 dB
Low band, -3 dB
Noise equivalent power
NEP
f=10 MHz
λ=800 nm
Feedback resistance
-
APD include,
Photoelectric sensitivity *
- λ=800 nm
Gain=30
Maximum input light level
-
Minimum detection limit
-
Min.
9
-
-
-
1.4 × 106
5.0
-
Typ.
10
DC
0.2
10
1.5 × 106
6.0
0.8
Max.
-
-
0.4
-
1.6 × 106
-
1.6
Unit
MHz
-
pW/Hz1/2
kΩ
V/W
µW
nWr.m.s.
High-speed amplifier section (C5460-01)
Parameter
Symbol
Condition
Cut-off frequency
fc
High band, -3 dB
Low band, -3 dB
Noise equivalent power
NEP
f=100 kHz
λ=800 nm
Feedback resistance
-
APD include,
Photoelectric sensitivity *
- λ=800 nm
Gain =30
Maximum input light level
-
Minimum detection limit
-
* Gain is set to 30 at the factory prior to shipping.
Min.
80
-
-
-
-1.4 × 108
0.05
-
Typ.
100
DC
0.02
10
-1.5 × 108
0.06
0.005
Max.
-
-
0.04
-
-1.6 × 108
-
0.01
Unit
kHz
-
pW/Hz1/2
MΩ
V/W
µW
nWr.m.s.
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