FK10UM-9 データシートの表示（PDF） - Renesas Electronics
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FK10UM-9 Datasheet PDF : 8 Pages
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OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
20
10V
7V
6V
16
12
TC = 25°C
Pulse Test
8
5V
PD=
4
125W
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 15A
16
10A
8
5A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 50V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI Nch POWER MOSFET
FK10UM-9
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V 10V 6V
10
PD = 125W
8
5V
6
4
TC = 25°C
Pulse Test
2
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
VGS = 10V
1.2
20V
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS = 10V
Pulse Test
5
TC=25°C
3
75°C
2
125°C
100
7
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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