CR12AM データシートの表示（PDF） - MITSUBISHI ELECTRIC
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CR12AM Datasheet PDF : 6 Pages
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GATE CHARACTERISTICS
3
2
VFGM = 6V
PGM = 5W
101
7
5
PG(AV)
3 VGT = 1.5V
2
= 0.5W
IFGM
100
IGT = 30mA
7
= 2A
5
3
2
10–1
7
5
VGD = 0.2V
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.6
1.4
11000.....,,,,,,,,20648 ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,DIS,,,,,,,,TR,,,,,,,,IBTUY,,,,,,,,TPIIO,,,,,,,,CNA,,,,,,,,L E,,,,,,,,XA,,,,,,,,MP,,,,,,,,LE,,,,,,,,
0.2
0
–40 –20 0 20 40 60 80 100 120
JUNCTION TEMPERATURE (°C)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
64
56 θ
48 360°
RESISTIVE,
40 INDUCTIVE
180°
120°
90°
32 LOADS
60°
24
θ = 30°
16
8
0
0 4 8 12 16 20 24 28 32
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
140
INDUCTIVE
LOADS
θ
120
360°
100
80
θ = 30°
60
90° 180°
60°
120°
40
20
0
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
Feb.1999
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