CM800HA-24H データシートの表示（PDF） - MITSUBISHI ELECTRIC

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CM800HA-24H

HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM800HA-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings

Symbol

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (TC = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current** (TC = 25°C)

Peak Emitter Current**

Maximum Collector Dissipation (TC = 25°C)

Mounting Torque, M8 Main Terminal

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

Pc

–

Mounting Torque, M6 Mounting

–

Mounting Torque, M4 Terminal

–

Weight

–

Isolation Voltage (Main terminal to Baseplate, AC 1 min.)

Viso

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

VGE(th)

IC = 80mA, VCE = 10V

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 800A, VGE = 15V

IC = 800A, VGE = 15V, Tj = 150°C

Total Gate Charge

QG

VCC = 600V, IC = 800A, VGE = 15V

Emitter-Collector Voltage

VEC

IE = 800A, VGE = 0V

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Input Capacitance

Cies

Output Capacitance

Coes

VGE = 0V, VCE = 10V

Reverse Transfer Capacitance

Cres

Resistive

Turn-on Delay Time

td(on)

Load

Switching

Rise Time

Turn-off Delay Time

tr

td(off)

VCC = 600V, IC = 800A,

VGE1 = VGE2 = 15V, RG = 3.3Ω

Times

Fall Time

Diode Reverse Recovery Time

tf

trr

IE = 800A, diE/dt = –1600A/µs

Diode Reverse Recovery Charge

Qrr

IE = 800A, diE/dt = –1600A/µs

CM800HA-24H

–40 to +150

–40 to +125

1200

±20

800

1600*

800

1600*

4800

8.83 ~ 10.8

1.96 ~ 2.94

0.98 ~ 1.47

1600

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

N·m

N·m

N·m

Grams

Vrms

Min.

Typ.

Max. Units

–

–

5.0

mA

–

–

0.5

µA

4.5

6.0

7.5

Volts

–

2.7

3.6

Volts

–

2.4

–

Volts

–

4500

–

nC

–

–

3.5

Volts

Min.

Typ.

Max. Units

–

–

180

nF

–

–

64

nF

–

–

36

nF

–

–

500

ns

–

–

1200

ns

–

–

1000

ns

–

–

350

ns

–

–

250

ns

–

5.9

–

µC

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)

Per IGBT

–

Thermal Resistance, Junction to Case

Rth(j-c)

Per FWDi

–

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

–

Typ. Max. Units

–

0.026 °C/W

–

0.058 °C/W

–

0.018 °C/W

Sep.1998

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