GRM155R61A105KE15D データシートの表示（PDF） - ON Semiconductor
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GRM155R61A105KE15D
ON Semiconductor
GRM155R61A105KE15D Datasheet PDF : 13 Pages
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NCP729
Table 3. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Thermal Characteristics, 4−bump CSP package
Thermal Resistance, Junction−to−Air (Note 3)
Thermal Resistance, Junction−to−Air (Note 4)
RqJA
90
157
3. Specified according to JEDEC 51.7 4−Layer Board.
4. Single component mounted on 4−Layer Board, 480 mm2, Top Layer thickness: 1 oz, Cu Area: 100 mm2.
Unit
°C/W
Table 4. ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.0 V, whichever is greater; IOUT =
10 mA, CIN = COUT = 1 mF unless otherwise noted. Typical values are at TJ = +25°C. (Note 5)
Parameter
Test Conditions
Symbol Min Typ Max Unit
Operating Input Voltage
Output Voltage Accuracy
Line Regulation
Load Regulation
Dropout Voltage (Note 6)
VIN
2.0
5.5
V
VOUT + 0.3 V ≤ VIN ≤ 5.5 V
0 mA ≤ IOUT ≤ 200 mA
VOUT
−2
+2
%
VOUT + 0.3 V ≤ VIN ≤ 5.5 V
RegLINE
150
mV/V
IOUT = 0 mA to 200 mA
RegLOAD
2
mV/mA
VDO = VIN – (VOUT(NOM) – 100 mV)
IOUT = 200 mA
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 2.6 V
VOUT = 2.8 V
VOUT = 2.85 V
VOUT = 3.0 V
VOUT = 3.3 V
VDO
170 220 mV
100 140
90
130
80
120
80
120
70
110
65
100
Quiescent Current
Ground Current
IOUT = 0 mA
IOUT = 200 mA
VOUT < 1.8 V
VOUT ≥ 1.8 V
IQ
IGND
35
50
mA
255
300
mA
155 200
Disable Current
Output Current Limit
Output Short Circuit Current
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
Turn−on Time
VEN = 0 V
VOUT = VOUT(NOM) – 100 mV
VOUT = 0 V
VEN Voltage increasing
VEN Voltage decreasing
VEN = 5.5 V
VOUT = 0 V to 98% VOUT(NOM),
after assertion of the EN
IDIS
0.3
1
mA
IOUT
250 400 530 mA
ISC
250 400 530 mA
VEN_HI
0.9
VEN_LO
V
0.4
IEN
100
500
nA
tON
150
ms
Power Supply Rejection Ratio
Output Noise Voltage
VIN = 3.8 V, VOUT = 3.3 V
VPP = 100 mV
IOUT = 200 mA
VOUT = 1.8 V, IOUT = 200 mA
f = 100 Hz to 100 kHz
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
VN
74
dB
72
56
10
mVrms
Line Transient
Load Transient
Undervoltage Lock−out
Thermal Shutdown Temperat-
ure
VOUT + 0.3 V ≤ VIN ≤ VOUT + 1.3 V or
VOUT + 0.3 V ≤ VIN ≤ VOUT + 1.3 V in 1 ms
IOUT = 1 mA to 200 mA or
IOUT = 200 mA to 1 mA in 1 ms
VIN rising from 0 V to 5.5 V
Temperature increasing from TJ = +25°C
±20
mV
DVOUT
±80
mV
UVLO
1.3
1.6
1.9
V
TSD
165
°C
Thermal Shutdown Hysteresis Temperature falling from TSD
TSDH
−
20
−
°C
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
6. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V.
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