BSS138LT1 データシートの表示（PDF） - Willas Electronic Corp.

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BSS138LT1

Power MOSFET 200 mAmps, 50 Volts

Willas Electronic Corp. 

Power MOSFET 200 mAmps, 50 Volts

BSS8LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

50

–

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

(VDS = 50 Vdc, VGS = 0 Vdc)

IDSS

µAdc

–

–

0.1

–

–

0.5

Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

–

–

±0.1

µAdc

ON CHARACTERISTICS (Note 1.)

Gate–Source Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.5

–

1.5

Vdc

Static Drain–to–Source On–Resistance

(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)

(VGS = 5.0 Vdc, ID = 200 mAdc)

rDS(on)

Ohms

–

5.6

10

–

–

3.5

Forward Transconductance

(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

gfs

100

–

–

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

(VDS = 25 Vdc, VGS = 0, f = 1 MHz)

Ciss

Coss

–

40

50

pF

–

12

25

Transfer Capacitance

(VDG = 25 Vdc, VGS = 0, f = 1 MHz)

Crss

–

3.5

5.0

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Turn–Off Delay Time

(VDD = 30 Vdc, ID = 0.2 Adc,)

td(on)

–

–

20

ns

td(off)

–

–

20

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

2012-10

WILLAS ELECTRONIC CORP.

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