BSM50GB170DN2 データシートの表示（PDF） - eupec GmbH
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BSM50GB170DN2 Datasheet PDF : 10 Pages
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BSM 50 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• RG on,min = 27 Ohm
Type
BSM 50 GB 170 DN2
VCE IC
1700V 72A
Package
HALF-BRIDGE 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2701-A67
Values
Unit
1700
V
1700
± 20
A
72
50
144
100
W
500
+ 150
°C
-40 ... + 125
≤ 0.25
K/W
≤ 0.75
4000
Vac
20
mm
11
F
sec
40 / 125 / 56
1
Oct-27-1997
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