BFM505,115 データシートの表示（PDF） - NXP Semiconductors.

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BFM505,115

Dual NPN wideband transistor

NXP Semiconductors. 

NXP Semiconductors

Dual NPN wideband transistor

Product specification

BFM505

CHARACTERISTICS

Tj = 25 C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

DC characteristics of any single transistor

V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0

20

V(BR)CEO collector-emitter breakdown voltage IC = 10 A; IB = 0

8

V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0

2.5

ICBO

collector-base leakage current

VCB = 6 V; IE = 0



hFE

DC current gain

IC = 5 mA; VCE = 6 V

60

DC characteristics of the dual transistor

hFE

VBEO

ratio of highest and lowest DC

current gain

difference between highest and

lowest base-emitter voltage

(offset voltage)

IC1 = IC2 = 5 mA;

1

VCE1 = VCE2 = 6 V

IE1 = IE2 = 10 mA; Tamb = 25 C 0





V





V





V



50

nA

120 250

1.2 

1



mV

AC characteristics of any single transistor

fT

Cc

Cre

GUM

s21 2

F

transition frequency

collector capacitance

feedback capacitance

maximum unilateral power gain;

note 1

insertion power gain

noise figure

IC = 5 mA; VCE = 3 V; f = 1 GHz 

IE = ie = 0; VCB = 3 V; f = 1 MHz 

IC = 0; VCB = 3 V; f = 1 MHz



IC = 5 mA; VCE = 3 V;



Tamb = 25 C; f = 900 MHz

IC = 5 mA; VCE = 3 V;



Tamb = 25 C; f = 2 GHz

IC = 5 mA; VCE = 3 V;

14

f = 900 MHz; Tamb = 25 C

IC = 5 mA; VCE = 3 V;



f = 900 MHz; S = opt

IC = 5 mA; VCE = 3 V;



f = 2 GHz; S = opt

IC = 1 mA; VCE = 3 V;



f = 900 MHz; S = opt

9



0.31 

0.22 

17



10



15



1.4 1.8

1.9 

1.1 1.6

GHz

pF

pF

dB

dB

dB

dB

dB

dB

Note

1.

GUM is the maximum unilateral power gain, assuming s12 is zero.

GUM

=

10

log

-----------------------s----2--1----2-----------------------

1 – s11 21 – s22 2

dB

1996 Oct 08

4

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