BCP68-25 データシートの表示（PDF） - Siemens AG

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BCP68-25

NPN Silicon AF Transistor

Siemens AG 

BCP 68

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 30 mA, IB = 0

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

Collector-base breakdown voltage

IC = 10 µA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IB = 0

Collector-base cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

Emitter-base cutoff current

VEB = 5 V, IC = 0

DC current gain1)

IC = 5 mA, VCE = 10 V

IC = 500 mA, VCE = 1 V

IC = 1 A, VCE = 1 V

BCP 68

BCP 68-10

BCP 68-16

BCP 68-25

Collector-emitter saturation voltage1)

IC = 1 A, IB = 100 mA

Base-emitter voltage1)

IC = 5 mA, VCE = 10 V

IC = 1 A, VCE = 1 V

AC characteristics

Transition frequency

IC = 100 mA, VCE = 5 V, f = 100 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 20

–

–

V

V(BR)CES 25

–

–

V(BR)CB0 25

–

–

V(BR)EB0 5

–

–

ICB0

–

–

100 nA

–

–

100 µA

IEB0

–

–

100 nA

hFE

VCEsat

–

50

–

–

85

–

375

85

100 160

100 160 250

160 250 375

60

–

–

–

–

0.5 V

VBE

–

0.6 –

–

–

1

fT

–

100 –

MHz

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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