BC807-16W データシートの表示（PDF） - Siemens AG
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BC807-16W Datasheet PDF : 5 Pages
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BC 807-16W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 , BC 807 W
45
-
-
IC = 10 mA, IB = 0 , BC 808 W
25
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IB = 0 , BC 807 W
50
-
-
IC = 10 µA, IB = 0 , BC 808 W
30
-
-
Base-emitter breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
5
-
-
Collector-base cutoff current
ICBO
VCB = 25 V, TA = 25 °C
-
-
100
nA
VCB = 25 V, TA = 150 °C
-
-
50
µA
Emitter cutoff current
IEBO
nA
VEB = 4 V, IC = 0
-
-
100
DC current gain
hFE
-
IC = 100 mA, VCE = 1 V, BC ... 16 W
100
160
250
IC = 100 mA, VCE = 1 V, BC ... 25 W
160
250
400
IC = 100 mA, VCE = 1 V, BC ... 40 W
250
350
630
IC = 300 mA, VCE = 1 V, BC ... 16 W
60
-
-
IC = 300 mA, VCE = 1 V, BC ... 25 W
100
-
-
IC = 300 mA, VCE = 1 V, BC ... 40 W
170
-
-
Collector-emitter saturation voltage 1) VCEsat
V
IC = 500 mA, IB = 50 mA
-
-
0.7
Base-emitter saturation voltage 1)
VBEsat
IC = 500 mA, IB = 50 mA
1) Pulse test: t < 300µs; D < 2%
-
-
1.2
Semiconductor Group
2
Dec-19-1996
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