BAS16TT1G(2010) データシートの表示（PDF） - ON Semiconductor

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BAS16TT1G
(Rev.:2010)

Silicon Switching Diode

ON Semiconductor 

BAS16TT1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

Reverse Current

(VR = 75 V)

(VR = 75 V, TJ = 150C)

(VR = 25 V, TJ = 150C)

Capacitance

(VR = 0, f = 1.0 MHz)

Reverse Recovery Time

(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)

Stored Charge

(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns) (Figure 3)

VF

mV

--

715

--

866

--

1000

--

1250

IR

mA

--

1.0

--

50

--

30

CD

--

2.0

pF

trr

--

6.0

ns

QS

--

45

PC

VFR

--

1.75

V

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