AS5C4008 データシートの表示（PDF） - Austin Semiconductor

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AS5C4008

512K x 8 SRAM SRAM MEMORY ARRAY

Austin Semiconductor 

Austin Semiconductor, Inc.

AC TEST CONDITIONS

Input pulse levels ................................................... Vss to 3.0V

Input rise and fall times ....................................................... 3ns

Input timing reference levels ............................................ 1.5V

Output reference levels ..................................................... 1.5V

Output load ............................................... See Figures 1 and 2

SRAM

AS5C4008

Q

167 ohms

1.73V

Q

167 ohms

1.73V

C=30pF

C=5pF

Fig. 1 Output Load Equivalent

Fig. 2 Output Load Equivalent

NOTES

1. All voltages referenced to VSS (GND).

2. -2V for pulse width < 20ns

3. I is dependent on output loading and cycle rates.

CC

4. This parameter is guaranteed but not tested.

5. Test conditions as specified with the output loading

as shown in Fig. 1 unless otherwise noted.

6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE

are specified with CL = 5pF as in Fig. 2. Transition is

measured ±200mV from steady state voltage.

7. At any given temperature and voltage condition,

tHZCE is less than tLZCE, and tHZWE is less than

tLZWE.

8. WE\ is HIGH for READ cycle.

9. Device is continuously selected. Chip enables and

output enables are held in their active state.

10. Address valid prior to, or coincident with, latest

occurring chip enable.

11. tRC = Read Cycle Time.

12. Chip enable and write enable can initiate and

terminate a WRITE cycle.

13. Output enable (OE\) is inactive (HIGH).

14. Output enable (OE\) is active (LOW).

15. ASI does not warrant functionality nor reliability of any

product in which the junction temperature exceeds

150°C. Care should be taken to limit power to acceptable

levels.

DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)

DESCRIPTION

VCC for Retention Data

Data Retention Current

(L Version Only)

Chip Deselect to Data

Retention Time

CONDITIONS

CE\ > (Vcc -0.2V)

VIN > (Vcc -0.2V) or < 0.2V

SYMBOL MIN

VDR

2

VCC = 2V ICCDR

tCDR

0

MAX

4.5

Operation Recovery Time

tR

10

UNITS

V

mA

ns

ms

NOTES

4

4, 11

AS5C4008

Rev. 5.5 12/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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