2SC3902 データシートの表示（PDF） - Inchange Semiconductor

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2SC3902

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3902

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

IC= 10μA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Vltage

IE= 10μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 500mA; IB= 50mA

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

hFE

DC Current Gain

IC= 10mA; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 50mA; VCE= 10V

COB

Output Capacitance

Switching Times

IE= 0; VCB= 10V, ftest= 1MHz

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 0.7A, IB1= -IB2= 70mA

RL= 14.3Ω; VCC= 100V

MIN TYP. MAX UNIT

180

V

160

V

6

V

0.45 V

1.2

V

0.1 μA

0.1 μA

100

400

120

MHz

14

pF

0.04

μs

1.2

μs

0.08

μs

‹ hFE Classifications

R

S

T

100-200 140-280 200-400

isc Website：www.iscsemi.cn

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