2SA1576A(2002) データシートの表示（PDF） - Secos Corporation.
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2SA1576A Datasheet PDF : 3 Pages
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Elektronische Bauelemente
RoHS Compliant Product
2SA1576A
PNP Silicon
Epitaxial Planar Transistor
Description
The 2SA1576A is designed for use
in driver stage of AF amplifier and
general purpose amplificaion.
Feature
*Complements the 2SC4081
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absol ute Maximum Ratings at Ta = 25oC
Para mete r
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
Characteristics at Ta = 25oC
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj, Tstg
Parameter
Symbol Min
Collector-Base Breakdown Voltage
BVCBO
-60
Collector-Emitter Breakdown Voltage
BVCEO
-50
Emitter-Base Breakdown Voltage
BVEBO
-6
Collector-Emitter Breakdown Voltage
ICBO
-
Emitter-Base Cutoff Current
IEBO
-
Collector Saturation Voltage
VCE(sat)
-
DC Current Gain
hFE
120
Gain-Bandwidth Product
fT
-
Output Capacitance
Classification of
Rank
hFE
Cob
-
5AQ
Range
120 - 270
Ratings
-60
-50
-6
-150
225
-55~+150
Typ. Max
-
-
-
-
-
-
- -100
- -100
- -500
-
560
140
-
4
5
Unit
V
V
V
nA
nA
mV
-
MHz
pF
5AR
180 - 390
Unit
V
V
V
mA
mW
oC
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5 mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz, IE=0
5AS
270 - 560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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