2N6517 データシートの表示（PDF） - Fairchild Semiconductor

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2N6517

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics (Continued) Ta = 25°C unless otherwise noted

Symbol

Parameter

Conditions

VCE(sat) Collector-Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

Cob

fT

VBE(on)

Output Capatitance

Current Gain Bandwidth Product *

Base-Emitter On Voltage

IC = 10mA, IB = 1mA

IC = 20mA, IB = 2mA

IC = 30mA, IB = 3mA

IC = 50mA, IB = 5mA

IC = 10mA, IB = 1mA

IC = 20mA, IB = 2mA

IC = 30mA, IB = 3mA

VCB = 20V, IE = 0, f = 1MHz

IC = 10mA, VCE = 20V, f = 20MHz

IC = 100mA, VCE = 10V

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

Min.

40

Max.

0.3

0.35

0.5

1

0.75

0.85

0.9

6

200

2

Units

V

V

V

V

V

V

V

pF

MHz

V

© 2010 Fairchild Semiconductor Corporation

2N6517 Rev. B1

2

www.fairchildsemi.com

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