2N3819 データシートの表示（PDF） - Vishay Semiconductors
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2N3819 Datasheet PDF : 5 Pages
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2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
10
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
8
Transconductance vs. Gate-Source Voltgage
10
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
8
TA = –55_C
6
25_C
TA = –55_C
6
25_C
4
125_C
2
4
125_C
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
TA = –55_C
240
VGS(off) = –2 V
180
–3 V
120
0
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
gfs RL
80
AV + 1 ) RLgos
Assume VDD = 15 V, VDS = 5 V
10 V
60
RL + ID
VGS(off) = –2 V
40
60
0
0.1
1
10
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
4
3
VDS = 0 V
2
1
VDS = 10 V
20
–3 V
0
0.1
1
10
ID – Drain Current (mA)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3.0
f = 1 MHz
2.4
1.8
1.2
VDS = 0 V
0.6
VDS = 10 V
0
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
www.vishay.com
7-4
0
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
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