IXSH35N100A データシートの表示（PDF） - IXYS CORPORATION
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IXSH35N100A Datasheet PDF : 4 Pages
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Fig.1 Saturation Characteristics
70
TJ = 25°C
60
VGE =15V
13V
11V
50
40
30
9V
20
10
7V
0
0
1
2
3
4
5
VCE - Volts
Fig.3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9
8
7
6
5
4
3
2
1
0
8
TJ = 25°C
IC = 70A
IC = 35A
IC = 17.5A
9 10 11 12 13 14 15
VGE - Volts
Fig.5 Input Admittance
50
VCE = 10V
40
30
20
TJ = 125°C
10
TJ = 25°C
TJ = - 40C
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2000 IXYS All rights reserved
IXSH 35N100A IXSM 35N100A
Fig.2 Output Characterstics
250
TJ = 25°C
200
150
100
VGE = 15V
13V
11V
50
9V
7V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig.4 Temperature Dependence
of Output Saturation Voltage
1.4
VGE=15V
1.3
IC = 70A
1.2
1.1
IC = 35A
1.0
0.9
0.8
IC =1 7.5A
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
1.2
VGE(th)
1.1
IC = 4mA
1.0
0.9
BVCES
IC = 3mA
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4
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