15N40 データシートの表示（PDF） - Unisonic Technologies

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15N40

15A, 400V N-CHANNEL POWER MOSFET

Unisonic Technologies 

15N40

Preliminary

Power MOSFET

„ ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V, TJ=25°C

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C, ID=250µA

Drain-Source Leakage Current

IDSS

VDS=400V, VGS=0V,

VDS=320V, TC=125°C

Gate- Source Leakage Current

ON CHARACTERISTICS

Forward

Reverse

IGSS

VGS=+30V, VDS=0V

VGS=-30V , VDS=0V

Gate Threshold Voltage

VGS(TH) VGS=VDS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=7.5A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VDS=25V, VGS=0V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain ("Miller") Charge

QG

QGS

VDS=320V, VGS=10V, ID=15A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=200V, ID=15A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

ISD=15A, VGS=0V

Body Diode Reverse Recovery Time

trr

ISD=15A, VGS=0V, dIF/dt=100A/µs

Body Diode Reverse Recovery Charge

QRR

(Note 1)

Notes: 1. Pulse Test: Pulse width≤300µs; Duty Cycle≤2%.

2. Essentially Independent of Operating Temperature Typical Characteristics

MIN TYP MAX UNIT

400

V

0.5

V/°C

1 µA

10 µA

+100 nA

-100 nA

2.0

4.0 V

0.26 0.35 Ω

1310 1750 pF

210 280 pF

17 25 pF

28 36 nC

8

nC

12

nC

26 62 ns

55 120 ns

72 154 ns

40 90 ns

15 A

60 A

1.4 V

333

ns

3.24

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-633.b

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