STS4DNF30L(2002) データシートの表示（PDF） - STMicroelectronics

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STS4DNF30L
(Rev.:2002)

DUAL N-CHANNEL 30V - 0.039Ω - 4A SO-8 STripFET™ POWER MOSFET

STMicroelectronics 

STS4DNF30L

THERMAL DATA

Rthj-amb (*)Thermal Resistance Junction-ambient Max

Tstg

Storage Temperature Range

Tl

Junction Temperature

(*) Mounted on FR-4 board (t≤ 10sec)

62.5

-55 to 150

150

°C/W

°C

°C

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 2 A

VGS = 4.5V, ID = 2 A

Min. Typ. Max. Unit

1

V

0.039 0.050

Ω

0.046 0.060

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 2 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

1

Typ.

3

330

90

40

Max.

Unit

S

pF

pF

pF

2/6

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