STS6DNF30L データシートの表示（PDF） - STMicroelectronics

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STS6DNF30L

DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8 STripFET™ POWER MOSFET

STMicroelectronics 

STS6DNF30L

THERMAL DATA

Rthj-amb *Thermal Resistance Junct ion-ambient Single Operation

Dual Operation

Tj

Maximum O perating Junction Temperature

Ts tg Storage T emperature

(*) Mounted on FR-4 board (Steady State)

78

62.5

150

-65 to 150

oC/W

oC/W

oC

oC

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbo l

V (BR)D SS

IDSS

IGSS

P ar am et e r

Test Conditions

Dr ain- s our c e

Breakdown Voltage

ID = 250 µA VGS = 0

Zero Gate Voltage

VDS = Max Rat ing

Drain Current (VGS = 0) VDS = Max Rat ing

Tc = 125 oC

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

Min.

30

Typ. Max.

1

10

± 100

Unit

V

µA

µA

nA

ON (∗)

Symbo l

VGS(th)

RDS(on)

P ar am et e r

Test Conditions

Gat e Threshold Voltage VDS = VGS ID = 250 µA

Static Drain-source On VGS = 10 V ID = 3 A

Resistance

VGS = 4.5 V ID = 3 A

Min.

1

Typ.

1.6

0.022

0.025

Max.

2.5

0.025

0.032

Unit

V

Ω

Ω

ID(o n) On State Drain Current VDS > ID(o n) x RDS(on )max

6

A

VGS = 10 V

DYNAMIC

Symbo l

gfs (∗)

Ciss

Coss

Crss

P ar am et e r

Forward

Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(o n) x RDS(on )ma x ID = 3 A

Min.

Typ.

9

Max.

Unit

S

VDS = 25 V f = 1 MHz VGS = 0 V

1250

pF

230

pF

50

pF

2/8

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