BZX84C4V7LT1 データシートの表示（PDF） - ON Semiconductor
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BZX84C4V7LT1 Datasheet PDF : 8 Pages
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BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device
BZX84C2V4LT1, G*
Device
Marking
Z11
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Min Nom Max
2.2
2.4
2.6
ZZT1
(W)
@ IZT1 =
5 mA
100
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7
2.1
ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
BZX84C2V7LT1, G*
Z12
2.5
2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
−3.5
0
450
BZX84C3V0LT1
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
−3.5
0
450
BZX84C3V3LT1, G*
Z14
3.1
3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
−3.5
0
450
BZX84C3V6LT1, G*
Z15
3.4
3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
−3.5
0
450
BZX84C3V9LT1, G*
Z16
3.7
3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3
1
−3.5 −2.5
450
BZX84C4V3LT1, G*
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
3
1
−3.5
0
450
BZX84C4V7LT1
Z1
4.4 4.7
5
80
3.7
4.7
500
4.5 5.4
15
3
2
−3.5 0.2
260
BZX84C5V1LT1
Z2
4.8 5.1 5.4
60
4.2
5.3
480
5
5.9
15
2
2
−2.7 1.2
225
BZX84C5V6LT1
Z3
5.2 5.6
6
40
4.8
6
400
5.2 6.3
10
1
2
−2.0 2.5
200
BZX84C6V2LT1
Z4
5.8 6.2 6.6
10
5.6
6.6
150
5.8 6.8
6
3
4
0.4 3.7
185
BZX84C6V8LT1
Z5
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
BZX84C7V5LT1
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
BZX84C8V2LT1
Z7
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
BZX84C9V1LT1
Z8
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
BZX84C10LT1, G*
Z9
9.4
10 10.6
20
9.3 10.6
150
9.4 10.7
10
0.2
7
4.5
8.0
130
BZX84C11LT1, G*
Y1
10.4 11 11.6
20
10.2 11.6
150
10.4 11.8
10
0.1
8
5.4
9.0
130
BZX84C12LT1, G*
Y2
11.4 12 12.7
25
11.2 12.7
150
11.4 12.9
10
0.1
8
6.0 10.0
130
BZX84C13LT1, G*
Y3
12.4 13 14.1
30
12.3
14
170
12.5 14.2
15
0.1
8
7.0 11.0
120
BZX84C15LT1
Y4
14.3 15 15.8
30
13.7 15.5
200
13.9 15.7
20
0.05 10.5 9.2 13.0
110
BZX84C16LT1, G*
Y5
15.3 16 17.1
40
15.2
17
200
15.4 17.2
20
0.05 11.2 10.4 14.0
105
BZX84C18LT1
Y6
16.8 18 19.1
45
16.7
19
225
16.9 19.2
20
0.05 12.6 12.4 16.0
100
BZX84C20LT1, G*
Y7
18.8 20 21.2
55
18.7 21.1
225
18.9 21.4
20
0.05 14 14.4 18.0
85
BZX84C22LT1, G*
Y8
20.8 22 23.3
55
20.7 23.2
250
20.9 23.4
25
0.05 15.4 16.4 20.0
85
BZX84C24LT1
Y9
22.8 24 25.6
70
22.7 25.5
250
22.9 25.7
25
0.05 16.8 18.4 22.0
80
Device
BZX84C27LT1, G*
Device
Marking
Y10
VZ1 Below
@ IZT1 = 2 mA
Min Nom Max
25.1 27 28.9
ZZT1
Below
@ IZT1 =
2 mA
80
VZ2 Below
@ IZT2 = 0.1 m
A
Min Max
25
28.9
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3 =
10 mA
300
25.2 29.3
45
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
0.05 18.9
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
21.4 25.3
70
BZX84C30LT1
Y11
28
30
32
80
27.8
32
300
28.1 32.4
50
0.05 21 24.4 29.4
70
BZX84C33LT1, G*
Y12
31
33
35
80
30.8
35
325
31.1 35.4
55
0.05 23.1 27.4 33.4
70
BZX84C36LT1
Y13
34
36
38
90
33.8
38
350
34.1 38.4
60
0.05 25.2 30.4 37.4
70
BZX84C39LT1, G*
Y14
37
39
41
130
36.7
41
350
37.1 41.5
70
0.05 27.3 33.4 41.2
45
BZX84C43LT1, G*
Y15
40
43
46
150
39.7
46
375
40.1 46.5
80
0.05 30.1 37.6 46.6
40
BZX84C47LT1, G*
Y16
44
47
50
170
43.7
50
375
44.1 50.5
90
0.05 32.9 42.0 51.8
40
BZX84C51LT1
Y17
48
51
54
180
47.6
54
400
48.1 54.6
100
0.05 35.7 46.6 57.2
40
BZX84C56LT1, G*
Y18
52
56
60
200
51.5
60
425
52.1 60.8
110
0.05 39.2 52.2 63.8
40
BZX84C62LT1
Y19
58
62
66
215
57.4
66
450
58.2 67
120
0.05 43.4 58.8 71.6
35
BZX84C68LT1, G*
Y20
64
68
72
240
63.4
72
475
64.2 73.2
130
0.05 47.6 65.6 79.8
35
BZX84C75LT1, G*
Y21
70
75
79
255
69.4
79
500
70.3 80.2
140
0.05 52.5 73.4 88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
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