BAT54WS-E3-18 データシートの表示（PDF） - Vishay Semiconductors
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BAT54WS-E3-18 Datasheet PDF : 4 Pages
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www.vishay.com
BAT54WS
Vishay Semiconductors
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAT54WS
ORDERING CODE
BAT54WS-E3-08 or BAT54WS-E3-18
BAT54WS-HE3-08 or BAT54WS-HE3-18
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
CIRCUIT
CONFIGURATION
Single
TYPE MARKING
L4
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Surge forward current (1)
Power dissipation (1)
tp < 1 s
VRRM
IF
IFRM
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
30
200
300
600
150
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Maximum junction temperature
Storage temperature range
Operating temperature range
RthJA
Tj
Tstg
Top
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
-65 to +150
-55 to +125
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reverse breakdown voltage
Leakage current (1)
Forward voltage (1)
Diode capacitance
Reserve recovery time
Tested with 100 μA pulses
V(BR)
30
VR = 25 V
IR
IF = 0.1 mA
VF
IF = 1 mA
VF
IF = 10 mA
VF
IF = 30 mA
VF
IF = 100 mA
VF
VR = 1 V, f = 1 MHz
CD
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
Note
(1) Pulse test; tp < 300 μs, θ < 2 %
TYP.
UNIT
V
mA
mA
mA
mW
UNIT
K/W
°C
°C
°C
MAX.
2
240
320
400
500
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
Rev. 2.0, 01-Jun-17
1
Document Number: 85667
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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