STW24N60DM2 データシートの表示（PDF） - STMicroelectronics

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STW24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB24N60DM2, STP24N60DM2,

STW24N60DM2

N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg

2

Power MOSFETs in D PAK, TO-220 and TO-247 packages

Datasheet − production data

TAB

2

3

1

D2PAK

TAB

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

D(2, TAB)

Features

Order codes

STB24N60DM2

STP24N60DM2

STW24N60DM2

VDS @

TJmax

650 V

RDS(on)

max

ID

0.20 Ω 18 A

• Extremely low gate charge and input

capacitance

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

• Extremely high dv/dt and avalanche

capabilities

Applications

G(1)

• Switching applications

Description

These FDmesh II Plus™ low Qg Power MOSFETs

with intrinsic fast-recovery body diode are

produced using a new generation of MDmesh™

S(3)

AM01476v1

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters and

ideal for bridge topologies and ZVS phase-shift

converters.

Order codes

STB24N60DM2

STP24N60DM2

STW24N60DM2

Table 1. Device summary

Marking

Package

2

D PAK

24N60DM2

TO-220

TO-247

Packaging

Tape and reel

Tube

March 2014

This is information on a product in full production.

DocID025499 Rev 3

1/21

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