FCP104N60 データシートの表示（PDF） - Fairchild Semiconductor
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FCP104N60 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 10.0V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
*Notes:
1. 250μs Pulse Test
1
0.3
1
2. TC = 25oC
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.24
*Note: TC = 25oC
0.20
0.16
0.12
VGS = 10V
0.08
0
VGS = 20V
20
40
60
80
100
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
20000
10000
Ciss
1000
100
Coss
10 *Note:
1. VGS = 0V
2. f = 1MHz
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0.1
0.1
1
10
Crss
100
600
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCP104N60 Rev. C0
Figure 2. Transfer Characteristics
200
*Notes:
100 1. VDS = 10V
2. 250μs Pulse Test
150oC
25oC
10
-55oC
1
2
3
4
5
6
7
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100 *Notes:
1. VGS = 0V
2. 250μs Pulse Test
10
150oC
1
25oC
0.1
0.01
0.001
0.0
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 18.5A
8
VDS = 120V
VDS = 300V
6
VDS = 480V
4
2
0
0
14
28
42
56
70
Qg, Total Gate Charge [nC]
3
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