MA2SD190GL データシートの表示（PDF） - Panasonic Corporation
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MA2SD190GL Datasheet PDF : 4 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2SD190G
Silicon epitaxial planar type
For super high speed switching
■ Features
• Forward current (Average) IF(AV) = 200 mA rectification is possible
/ • Low forward voltage: VF < 0.47 V
• Small reverse current: IR < 15 µA
ce tage. ■ Absolute Maximum Ratings Ta = 25°C
n d le s Parameter
Symbol Rating
Unit
a e cyc Reverse voltage
VR
20
V
life Repetitive peak reverse voltage
VRRM
20
V
ct Forward current (Average)
IF(AV)
200
mA
n u rodu Peak forward current
IFM
300
mA
P Non-repetitive peak forward
IFSM
1
A
te tin ur surgecurrent*
g fo e . Junction temperature
win typ tion Storage temperature
Tj
125
°C
Tstg
−55 to +125
°C
in n follo ance pe ed rma Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Package
• Code
SSMini2-F4
• Pin Name
1: Anode
2: Cathode
■ Marking Symbol: 3L
a coed inclueddesmaintteennancettiynued ttyyppe test info.jp/en/ ■ Electrical Characteristics Ta = 25°C ± 3°C
u n in on d t la .co Parameter
Symbol
Conditions
Min Typ Max Unit
M is tin la a isc ue ou nic Forward voltage
on p m d d ntin ab aso Reverse current
isc ne co RL an Terminal capacitance
e/D pla dis ing U icon.p Reverse recovery time *
VF
IF = 200 mA
IR
VR = 10 V
Ct
VR = 0 V, f = 1 MHz
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
0.47
V
15
µA
15
pF
2
ns
Danc llow em Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
ten fo .s 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
in isit ww and the leakage of current from the operating equipment.
Ma e v ://w 3. Absolute frequency of input and output is 250 MHz.
as ttp 4. *: trr measurement circuit
Ple h Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: October 2007
SKH00177AED
1
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