BB640(2002) データシートの表示（PDF） - Infineon Technologies

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BB640
(Rev.:2002)

Silicon Variable Capacitance Diode

Infineon Technologies 

BB640...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

VR = 30 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 25 V, f = 1 MHz

VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

Capacitance ratio

VR = 2 V, VR = 25 V, f = 1 MHz

Capacitance matching1)

VR = 1 V, VR = 28 V, f = 1 MHz

Series resistance

CT = 12 pF, f = 100 MHz

CT

62

47.5

2.85

2.8

CT1/CT28 19.5

69

54.5

3.28

3.05

-

pF

76

61.5

3.7

3.3

25

CT2/CT25 15 16.6

-

CT/CT

-

-

2.5 %

rS

- 1.15 - 

1For details please refer to Application Note 047.

2

Nov-07-2002

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