ZXM61P03F データシートの表示（PDF） - Diodes Incorporated.

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ZXM61P03F

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZXM61P03F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current

(VGS=-10V; TA=25°C)(b)

(VGS=-10V; TA=70°C)(b)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode)(b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

-30

Ϯ20

-1.1

-0.9

-4.3

-0.88

-4.3

625

5

806

6.4

-55 to +150

UNIT

V

V

A

A

A

A

mW

mW/°C

mW

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

Junction to Ambient (b)

RθJA

RθJA

200

°C/W

155

°C/W

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ISSUE 1 - OCTOBER 2005

2

SEMICONDUCTORS

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